BSC035N10NS5ATMA1
$1.13
100V OptiMOS Power Transistor
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BSC035N10NS5ATMA1 – 100V OptiMOS™ Power Transistor – Infineon Technologies
Optimize power efficiency in demanding applications with the BSC035N10NS5ATMA1 N-Channel MOSFET from Infineon Technologies. This surface-mount power transistor delivers exceptional current handling and ultra-low Rds(on) for reduced conduction losses. PCX supplies this industry-leading component with guaranteed authenticity and rapid shipping.
Key Features
- 100V Drain-Source Voltage (Vdss) – Robust protection against voltage spikes
- 100A Continuous Drain Current – High-power handling at 25°C (Tc)
- Ultra-Low 3.5mΩ Rds(on) – Minimizes power dissipation @50A, 10V
- ±20V Gate-Source Voltage (Vgs) – Enhanced gate reliability
- 87nC Gate Charge (Qg) – Optimized switching efficiency
- -55°C to +150°C Operating Range – Industrial temperature resilience
Technical Specifications
Part of Infineon’s OptiMOS™ series, this N-Channel MOSFET utilizes advanced silicon technology in a compact PG-TDSON-8-7 (8-PowerTDFN) package. With maximum power dissipation of 156W (Tc) and low input capacitance (6500pF @50V), it ensures stable performance in high-frequency switching environments. The device features a drive voltage of 6V/10V for optimal Rds(on) performance.
Typical Applications
- DC-DC converters and SMPS designs
- Motor control systems and industrial drives
- Solar inverters and renewable energy systems
- Automotive power management modules
- Battery protection circuits
About Infineon Technologies
Infineon Technologies is a global semiconductor leader renowned for innovation in power systems and IoT solutions. Their components set industry benchmarks for efficiency, thermal management, and reliability across automotive, industrial, and consumer markets.
With decades of expertise in MOSFET development, Infineon’s OptiMOS™ series represents cutting-edge power transistor technology. Rigorous quality testing ensures consistent performance in mission-critical applications, making them the preferred choice for engineering teams worldwide.
About Power MOSFETs
Power MOSFETs are fundamental semiconductor devices that regulate voltage and current in electronic circuits. Their ability to switch rapidly with minimal losses makes them indispensable for power conversion and management tasks across industries.
Modern MOSFETs like this OptiMOS™ device enable smaller, more efficient designs by reducing heat generation and board space requirements. Selection criteria include voltage ratings, Rds(on), thermal characteristics, and packaging – all optimized in this component for next-generation power systems.
Packaging Options
Available in Tape & Reel (TR), Cut Tape (CT), and Digi-Reel® formats for automated assembly compatibility. Specify your preferred packaging during checkout.
FAQs
Q: What thermal management is recommended for this MOSFET?
A: Proper heatsinking is essential. Maximum power dissipation is 156W at case temperature (Tc) – ensure adequate cooling for high-current applications.
Q: Is this suitable for automotive applications?
A: Yes, its wide temperature range (-55°C to +150°C) and robust construction meet requirements for automotive power systems.
Q: How does gate charge affect switching performance?
A: Lower Qg (87nC here) enables faster switching frequencies and reduces driver losses, improving overall efficiency.
Q: What’s the difference between Ta and Tc power ratings?
A: Ta (ambient temperature) rating is 2.5W, while Tc (case temperature) rating is 156W – always design using Tc values for accurate thermal modeling.
Q: Can I parallel multiple devices for higher current?
A: Yes, but include gate resistors to balance switching characteristics. Refer to Infineon’s datasheet for layout guidelines.
Q: Does PCX provide design support?
A: Our technical team offers application guidance – contact support for schematic reviews or component selection assistance.
Disclaimer: Product images are representational. Refer to datasheet for exact dimensions and specifications.
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Additional Information
| Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs |
|---|---|
| Brand | Infineon Technologies |
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Packaging | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 115µA |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 50 V |
| Power Dissipation (Max) | 2.5W (Ta), 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8-7 |
| Package / Case | 8-PowerTDFN |
| Base Product Number | BSC035 |
| Full Description | BSC035N10NS5ATMA1 |
